The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Jun. 06, 2008
Applicants:
Zhong Dong, Fremont, CA (US);
Barbara Haselden, Cupertino, CA (US);
Inventors:
Zhong Dong, Fremont, CA (US);
Barbara Haselden, Cupertino, CA (US);
Assignee:
Promos Technologies Pte. Ltd., Singapore, SG;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); H01L 29/792 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a nonvolatile memory cell with charge trapping dielectric (), the tunnel dielectric () includes chlorine adjacent to the charge trapping dielectric but no chlorine (or less chlorine) adjacent to the cell's channel region (). The chlorine adjacent to the charge trapping dielectric serves to improve the programming and/or erase speed. The low chlorine concentration adjacent to the channel region prevents chlorine from degrading the data retention. Other features are also provided.