The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Feb. 15, 2007
Saptharishi Sriram, Cary, NC (US);
Jason Henning, Carrboro, NC (US);
Keith Wieber, Siler City, NC (US);
Saptharishi Sriram, Cary, NC (US);
Jason Henning, Carrboro, NC (US);
Keith Wieber, Siler City, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Metal-semiconductor field-effect transistors (MESFETS) are provided. A MESFET is provided having a source region, a drain region and a gate. The gate is between the source region and the drain region. A p-type conductivity layer is provided beneath the source region, the p-type conductivity layer being self-aligned to the gate. Related methods of fabricating MESFETs are also provided herein.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile