Semiconductor constructions, and methods of forming dielectric materials

Abstract

Some embodiments include methods of forming dielectric materials associated with semiconductor constructions. A semiconductor substrate surface having two different compositions may be exposed to a first silanol, then to organoaluminum to form a monolayer, and finally to a second silanol to form a dielectric material containing aluminum from the organoaluminum together with silicon and oxygen from the second silanol. Alternatively, or additionally, an organoaluminum monolayer may be formed across a semiconductor substrate, and then exposed to silanol within a deposition chamber, with the silanol being provided in two doses. Initially, a first dose of the silanol is injected the chamber, and then the first dose is flushed from the chamber to remove substantially all unreacted silanol from within the chamber. Subsequently, the second dose of silanol is injected into the chamber. Some embodiments include semiconductor constructions.