The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
May. 16, 2007
Takayuki Nishiura, Itami, JP;
SO Tanaka, Itami, JP;
Yusuke Horie, Itami, JP;
Kyoko Okita, Itami, JP;
Takatoshi Okamoto, Toyonaka, JP;
Takayuki Nishiura, Itami, JP;
So Tanaka, Itami, JP;
Yusuke Horie, Itami, JP;
Kyoko Okita, Itami, JP;
Takatoshi Okamoto, Toyonaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
There are provided an inspection method of a compound semiconductor substrate that can have the amount of impurities at the surface of the compound semiconductor substrate reduced, a compound semiconductor substrate, a surface treatment method of a compound semiconductor substrate, and a method of producing a compound semiconductor crystal. In the inspection method of the surface of the compound semiconductor substrate, the surface roughness Rms of the compound semiconductor substrate is measured using an atomic force microscope at the pitch of not more than 0.4 nm in a scope of not more than 0.2 μm square. The surface roughness Rms of the compound semiconductor substrate measured by the inspection method is not more than 0.2 nm.