The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Oct. 30, 2003
Applicants:
Paul Colfer, Co. Offaly, IE;
Lorraine Byrne, Dublin, IE;
Eugene Cahill, Meath, IE;
Phil Keenan, Lucan, IE;
Niall Stobie, Dublin, IE;
Inventors:
Paul Colfer, Co. Offaly, IE;
Lorraine Byrne, Dublin, IE;
Eugene Cahill, Meath, IE;
Phil Keenan, Lucan, IE;
Niall Stobie, Dublin, IE;
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing an electronic component comprising at least one n- or p-doped portion, comprising the steps of: co-depositing inorganic semi-conducting nanoparticles and dopant on a substrate, the nanoparticles being a group four element such as silicon or germanium; fusing the nanoparticles by heating to form a continuous layer; and subsequently; and, recrystallising the layer.