The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Jan. 07, 2009
Applicant:
Kiyoshi Mori, San Antonio, TX (US);
Inventor:
Kiyoshi Mori, San Antonio, TX (US);
Assignee:
SuVolta, Inc., Los Gatos, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01);
U.S. Cl.
CPC ...
Abstract
A junction field effect transistor comprises an insulating layer formed in a substrate. A source region of a first conductivity type is formed on the insulating layer, and a drain region of the first conductivity type is formed on the insulating layer and spaced apart from the drain region. A channel region of the first conductivity type is located between the source region and the drain region and formed on the insulating layer. A gate region of the second conductivity type surrounds all surfaces of a length of the channel region such that the channel region is embedded within the gate region.