The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
May. 05, 2006
Maarten Marinus Johannes Wilhelmus Van Herpen, Heesch, NL;
Vadim Yevgenyevich Banine, Helmond, NL;
Koen Van Ingen Schenau, Veldhoven, NL;
Derk Jan Wilfred Klunder, Geldrop, NL;
Maarten Marinus Johannes Wilhelmus Van Herpen, Heesch, NL;
Vadim Yevgenyevich Banine, Helmond, NL;
Koen Van Ingen Schenau, Veldhoven, NL;
Derk Jan Wilfred Klunder, Geldrop, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
An EUV mask includes, on top of a multi-layer mirror, a spectral purity enhancement layer, for application in an EUV lithographic apparatus. On top of the spectral purity enhancement layer, a patterned absorber layer is provided. The spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. The patterned absorber layer may also itself function as an anti-reflection (AR) coating. The AR effect of this absorber layer is a function of the aperture sizes in the pattern. The spectral purity of a mask may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.