The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Jan. 24, 2007
Seung Beom Cho, Daejeon, KR;
Jong Pil Kim, Daejeon, KR;
Jun Seok Nho, Daejeon, KR;
Myoung Hwan OH, Daejeon, KR;
Jang Yul Kim, Daejeon, KR;
Seung Beom Cho, Daejeon, KR;
Jong Pil Kim, Daejeon, KR;
Jun Seok Nho, Daejeon, KR;
Myoung Hwan Oh, Daejeon, KR;
Jang Yul Kim, Daejeon, KR;
LG Chem, Ltd., Seoul, KR;
Abstract
Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes.