The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Apr. 08, 2008
James W Adkisson, Jericho, VT (US);
Jeffrey P. Gambino, Westford, VT (US);
Rajendran Krishnasamy, Junction, VT (US);
Solomon Mulugeta, Essex Junction, VT (US);
James W Adkisson, Jericho, VT (US);
Jeffrey P. Gambino, Westford, VT (US);
Rajendran Krishnasamy, Junction, VT (US);
Solomon Mulugeta, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A tensile-stress-generating structure is formed above a gate electrode in a CMOS image sensor to apply a normal tensile stress between a charge collection well of a photodiode, which is also a source region of a transfer transistor, and a floating drain in the direction connecting the source region and the floating drain. The tensile stress lowers the potential barrier between the source region and the body of the transfer transistor to effect a faster and more through transfer of the electrical charges in the source region to the floating drain. Image lag is thus reduced in the CMOS image sensor. Further, charge capacity of the source region is also enhanced due to the normal tensile stress applied to the source region.