The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
May. 30, 2006
Erh Kun Lai, Longjing Shiang, TW;
Chia Hua Ho, Kaoshing, TW;
Kuang Yeu Hsieh, Kaoshing, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A phase change random access memory PCRAM device is described suitable for use in large-scale integrated circuits. An exemplary memory device has a pipe-shaped first electrode formed from a first electrode layer on a sidewall of a sidewall support structure. A sidewall spacer insulating member is formed from a first oxide layer and a second, 'L-shaped,' electrode is formed on the insulating member. An electrical contact is connected to the horizontal portion of the second electrode. A bridge of memory material extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall spacer insulating member.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile