The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Aug. 08, 2006
Jun-hyun Cho, Gyeonggi-do, KR;
Mi-ae Kim, Seoul, KR;
Jun-Hyun Cho, Gyeonggi-do, KR;
Mi-Ae Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of forming an insulating layer and a method of manufacturing a semiconductor device using insulating layer are disclosed. A preliminary insulating layer including a material having a relatively low dielectric constant is formed on an object. An upper portion of the preliminary insulating layer is provided with an ozone gas to transform the preliminary insulating layer into an insulating layer having an upper insulating film including an oxide and a lower insulating film including the material having the relatively low dielectric constant. The upper insulating film may further be located on the lower insulating film.