The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Oct. 20, 2004
Tetsuo Shimomura, Ohtsu, JP;
Masahiko Nakamori, Ohtsu, JP;
Takatoshi Yamada, Ohtsu, JP;
Kazuyuki Ogawa, Osaka, JP;
Atsushi Kazuno, Osaka, JP;
Masahiro Watanabe, Osaka, JP;
Tetsuo Shimomura, Ohtsu, JP;
Masahiko Nakamori, Ohtsu, JP;
Takatoshi Yamada, Ohtsu, JP;
Kazuyuki Ogawa, Osaka, JP;
Atsushi Kazuno, Osaka, JP;
Masahiro Watanabe, Osaka, JP;
Toyo Tire & Rubber Co., Ltd., Osaka, JP;
Abstract
The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference ΔT (ΔT=T−T) (%) between Tand Tis within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein Tis the light transmittance (%) of the light-transmitting region measured at the measurement wavelength λ after dipping for 24 hours in a KOH aqueous solution at pH 11 or an HOaqueous solution at pH 4 and Tis the light-transmittance (%) measured at the measurement wavelength λ before the dipping.