The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Dec. 19, 2008
Min-hsuan Tsai, Tainan County, TW;
Min-Hsuan Tsai, Tainan County, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A power semiconductor device includes a P type silicon substrate; a deep N well in the P type silicon substrate; a P grade region in the deep N well; a Pdrain region in the P grade region; a first STI region in the P grade region; a second STI region in the P grade region, wherein the first and second STI region isolate the Pdrain region; a third STI region in the deep N well; a gate electrode overlying an area between the second and third STI regions and covering a portion of the second STI region; a gate dielectric layer between the gate electrode and the P type silicon substrate; a P well formed at one side of the third STI region; and a Psource region in the P well.