The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Jul. 21, 2008
Kyoung-sub Shin, Seongnam-si, KR;
Cheol-kyu Lee, Yongin-si, KR;
Sung-il Cho, Seoul, KR;
Young-kyu Cho, Seongnam-si, KR;
Kyoung-Sub Shin, Seongnam-si, KR;
Cheol-Kyu Lee, Yongin-si, KR;
Sung-il Cho, Seoul, KR;
Young-Kyu Cho, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments relate to a semiconductor memory device and a method of forming the semiconductor memory device. The semiconductor memory device may include a first interlayer insulating layer on a semiconductor substrate. A bit line may be arranged in a first direction on the first interlayer insulating layer. A bit line contact pad may be disposed in the first interlayer insulating layer and electrically connected to the bit line. A storage contact pad may be disposed in the first interlayer insulating layer. A top surface of the bit line contact pad may be lower than a top surface of the storage contact pad.