The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Nov. 14, 2007
Wataru Saito, Kanagawa-ken, JP;
Akira Yoshioka, Kanagawa-ken, JP;
Hidetoshi Fujimoto, Kanagawa-ken, JP;
Takao Noda, Kanagawa-ken, JP;
Yasunobu Saito, Tokyo, JP;
Tomohiro Nitta, Kanagawa-ken, JP;
Yorito Kakiuchi, Kanagawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Akira Yoshioka, Kanagawa-ken, JP;
Hidetoshi Fujimoto, Kanagawa-ken, JP;
Takao Noda, Kanagawa-ken, JP;
Yasunobu Saito, Tokyo, JP;
Tomohiro Nitta, Kanagawa-ken, JP;
Yorito Kakiuchi, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes: a first semiconductor layer of p-type AlGaN (0≦x≦1); a second semiconductor layer of n-type AlGaN (0<y<1, x<y) formed on the first semiconductor layer; a control electrode formed on the second semiconductor layer; a first main electrode connected to the first semiconductor layer and the second semiconductor layer; and a second main electrode connected to the second semiconductor layer. An interface between the first semiconductor layer and the second semiconductor layer has a surface orientation of (1-101) or (11-20).