The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Feb. 21, 2007
Yoshiro Aoki, Tokyo, JP;
Bong-gyun Ko, Tokyo, JP;
Yoshiro Aoki, Tokyo, JP;
Bong-Gyun Ko, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A MLD-SIMOX wafer is obtained by forming a first ion-implanted layer in a silicon wafer; forming a second ion-implanted layer that is in an amorphous state; and subjecting the wafer to a high-temperature heat treatment to maintain the wafer in an atmosphere containing oxygen at a temperature that is not lower than 1300° C. but lower than a silicon melting point to change the first and the second ion-implanted layers into a BOX layer, wherein the dose amount for the first ion-implanted layer is 1.25 to 1.5×10atoms/cm, the dose amount for the second ion-implanted layer is 1.0×10to 1×10atoms/cm, the wafer is preheated to a temperature of 50° C. to 200° C. before forming the second ion-implanted layer, and the second ion-implanted layer is formed in a state where it is continuously heated to a preheating temperature.