The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Mar. 25, 2008
Richard Anthony Dipietro, Campbell, CA (US);
Urs T. Duerig, Rueschlikon, CH;
Jane Elizabeth Frommer, San Jose, CA (US);
Bernd Walter Gotsmann, Horgen, CH;
Erik Christopher Hagberg, Evansville, IN (US);
James Lupton Hedrick, Pleasanton, CA (US);
Armin W. Knoll, Zurich, CH;
Teddie Peregrino Magbitang, San Jose, CA (US);
Robert Dennis Miller, San Jose, CA (US);
Russell Clayton Pratt, Los Gatos, CA (US);
Charles Gordon Wade, Los Gatos, CA (US);
Richard Anthony DiPietro, Campbell, CA (US);
Urs T. Duerig, Rueschlikon, CH;
Jane Elizabeth Frommer, San Jose, CA (US);
Bernd Walter Gotsmann, Horgen, CH;
Erik Christopher Hagberg, Evansville, IN (US);
James Lupton Hedrick, Pleasanton, CA (US);
Armin W. Knoll, Zurich, CH;
Teddie Peregrino Magbitang, San Jose, CA (US);
Robert Dennis Miller, San Jose, CA (US);
Russell Clayton Pratt, Los Gatos, CA (US);
Charles Gordon Wade, Los Gatos, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyaryletherketone polymers are used as the recording layers in atomic force data storage devices, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyaryletherketone polymers may be tuned to match thermal and force parameters required in read-write-erase cycles.