The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Jun. 29, 2007
Applicants:
Sang-soo Park, Kyoungki-do, KR;
Jung-taik Cheong, Kyoungki-do, KR;
Inventors:
Sang-Soo Park, Kyoungki-do, KR;
Jung-Taik Cheong, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc, Kyoungki-Do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating capacitor in a semiconductor device includes forming an sacrificial layer and over a substrate, forming a mask pattern over the sacrificial layer, etching the sacrificial layer in two steps with differentiated top and bottom power levels using the mask pattern as an etch mask to form an opening, and forming a bottom electrode over the opening.
Park, Sang-Soo. (2010). Method for fabricating capacitor in semiconductor device (U.S. Patent No. 7723239). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7723239
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile