The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Nov. 22, 2006
Applicants:
Suryadevara V. Babu, Potsdam, NY (US);
Anita Natarajan, Potsdam, NY (US);
Sharath Hegde, Portland, OR (US);
Inventors:
Suryadevara V. Babu, Potsdam, NY (US);
Anita Natarajan, Potsdam, NY (US);
Sharath Hegde, Portland, OR (US);
Assignees:
Clarkson University, Potsdam, NY (US);
Infotonics Technology Center Inc., Canandaigua, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.