The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Feb. 22, 2008
Applicants:
Kartik Santhanam, Fremont, CA (US);
Manoj Vallaikal, Sunnyvale, CA (US);
Peter I. Porshnev, San Jose, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Inventors:
Kartik Santhanam, Fremont, CA (US);
Manoj Vallaikal, Sunnyvale, CA (US);
Peter I. Porshnev, San Jose, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
In plasma immersion ion implantation of a polysilicon gate, a hydride of the dopant is employed as a process gas to avoid etching the polysilicon gate, and sufficient argon gas is added to reduce added particle count to below 50 and to reduce plasma impedance fluctuations to 5% or less.