The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Mar. 14, 2008
Richard J. Carter, Hopewell Junction, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
George J. Kluth, Hopewell Junction, NY (US);
John G. Pellerin, Hopewell Junction, NY (US);
Richard J. Carter, Hopewell Junction, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
George J. Kluth, Hopewell Junction, NY (US);
John G. Pellerin, Hopewell Junction, NY (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method is provided for manufacturing an integrated circuit including a short channel (SC) device and a long channel (LC) device each overlaid by an interlayer dielectric. The SC device has an SC gate stack and the LC device initially has a dummy gate. In one embodiment, the method includes the steps of removing the dummy gate to form an LC device trench, and depositing metal gate material over the SC device and the LC device. The metal gate material contacts the SC gate stack and substantially fills the LC device trench.