The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Oct. 25, 2007
Satoru Hanzawa, Hachioji, JP;
Kiyoo Itoh, Higashikurume, JP;
Hideyuki Matsuoka, Nishitokyo, JP;
Motoyasu Terao, Hinode, JP;
Takeshi Sakata, Hino, JP;
Satoru Hanzawa, Hachioji, JP;
Kiyoo Itoh, Higashikurume, JP;
Hideyuki Matsuoka, Nishitokyo, JP;
Motoyasu Terao, Hinode, JP;
Takeshi Sakata, Hino, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The object of the invention is to avoid an unselected data line being driven in a memory array composed of memory cells each of which uses a storage element depending upon variable resistance and a selection transistor when the selection transistors in all memory cells on a selected wordline conduct. To achieve the object, a source line parallel to a data line is provided, a precharge circuit for equipotentially driving both and a circuit for selectively driving the source line are arranged. Owing to this configuration, a current path is created in only a cell selected by a row decoder and a column decoder and a read-out signal can be generated. Therefore, a lower-power, lower-noise and more highly integrated nonvolatile memory such as a phase change memory can be realized, compared with a conventional type.