The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Dec. 07, 2006
Muriel Martinez, Saint Egreve, FR;
Frédéric Metral, Saint Hilaire du Touvet, FR;
Patrick Reynaud, Saint Martin d'Heres, FR;
Zohra Chahra, Meylan, FR;
Muriel Martinez, Saint Egreve, FR;
Frédéric Metral, Saint Hilaire du Touvet, FR;
Patrick Reynaud, Saint Martin d'Heres, FR;
Zohra Chahra, Meylan, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
A method of planarization of a surface of a heteroepitaxial layer by chemical-mechanical polishing the disturbed surface of the heteroepitaxial layer with a polishing pad having a compressibility greater than 2% and less than 15% and a slurry comprising at least 20% of silica particles having an average diameter between about 70 and about 100 nm. This method allows to reach high polishing rates appropriated for eliminating surface defects on heteroepitaxial layers, such as crosshatch patterns, and to achieve, in the same time, a final polish that is desirable to facilitate further operations.