The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Dec. 14, 2006
Peter Marc Zagwijn, Nijkerk, NL;
Theodorus Gerardus Maria Oosterlaken, Oudewater, NL;
Steven R. A. Van Aerde, Tielt-Winge, BE;
Pamela René Fischer, Leuven, BE;
Peter Marc Zagwijn, Nijkerk, NL;
Theodorus Gerardus Maria Oosterlaken, Oudewater, NL;
Steven R. A. Van Aerde, Tielt-Winge, BE;
Pamela René Fischer, Leuven, BE;
ASM International N.V., , NL;
Abstract
A doped silicon layer is formed in a batch process chamber at low temperatures. The silicon precursor for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor is an n-type dopant, such as phosphine. The silicon precursor can be flowed into the process chamber with the flow of the dopant precursor or separately from the flow of the dopant precursor. Surprisingly, deposition rate is independent of dopant precursor flow, while dopant incorporation linearly increases with the dopant precursor flow.