The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Apr. 07, 2006
Ichiro Mizushima, Yokohama, JP;
Hajime Nagano, Yokkaichi, JP;
Yoshio Ozawa, Yokohama, JP;
Hisataka Meguro, Yokohama, JP;
Takashi Suzuki, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Hajime Nagano, Yokkaichi, JP;
Yoshio Ozawa, Yokohama, JP;
Hisataka Meguro, Yokohama, JP;
Takashi Suzuki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a method for manufacturing a non-volatile semiconductor device according to this invention, steps are provided for forming a plurality of first semiconductor portions over a substrate; selectively growing a plurality of second semiconductor portions in contacting with said plurality of first semiconductor portions respectively; partially removing said plurality of second semiconductor portions to prepare a plurality of floating gates with substantially flat surfaces; forming an insulating layer over said plurality of floating gates; and forming a control gate over said insulating layer.