The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Feb. 08, 2008
Applicants:
Kazuyuki Hayashi, Chiyoda-ku, JP;
Kazuo Kadowaki, Chiyoda-ku, JP;
Takashi Sugiyama, Chiyoda-ku, JP;
Inventors:
Assignee:
Asahi Glass Company, Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %, and wherein the absorber layer has a content of N being 0 to at most 35 at. %.