The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Dec. 05, 2007
Ching-nan Hsiao, Kaohsiung County, TW;
Ying-cheng Chuang, Taoyuan County, TW;
Chung-lin Huang, Taoyuan County, TW;
Shih-yang Chiu, Taipei, TW;
Ching-Nan Hsiao, Kaohsiung County, TW;
Ying-Cheng Chuang, Taoyuan County, TW;
Chung-Lin Huang, Taoyuan County, TW;
Shih-Yang Chiu, Taipei, TW;
Nanya Technology Corporation, Kueishan, Taoyuan, TW;
Abstract
The invention provides a dynamic random access memory (DRAM) with an electrostatic discharge (ESD) region. The upper portion of the ESD plug is metal, and the lower portion of the ESD plug is polysilicon. This structure may improve the mechanical strength of the ESD region and enhance thermal conductivity from electrostatic discharging. In addition, the contact area between the ESD plugs and the substrate can be reduced without increasing aspect ratio of the ESD plugs. The described structure is completed by a low critical dimension controlled patterned photoresist, such that the processes and equipments are substantially maintained without changing by a wide margin.