The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Nov. 14, 2007
Sung-bin Lin, Hsinchu, TW;
Sung-Bin Lin, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for forming a flash memory cell and the structure thereof is disclosed. The flash memory cell includes a substrate, a first raised source/drain region and a second raised source/drain region separated by a trench in-between, a first charge-trapping spacer and a second charge-trapping spacer respectively on the sidewall of the first and second raised source/drain region, a gate structure covering the first and second spacers, the trench and the first and second raised source/drain regions and a gate oxide layer located between the gate structure and the first and second raised source/drain regions and the substrate. By forming the charge-trapping spacers with less e-distribution, the flash memory affords better erasure efficiency.