The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Jun. 27, 2006
IN Ho Hwang, Daejeon Metropolitan, KR;
Hyeon Choi, Daejeon Metropolitan, KR;
Min Jeong Lee, Seoul, KR;
Dong Hoon Lee, Seoul, KR;
Kong Kyeom Kim, Daejeon Metropolitan, KR;
Jae Soon Bae, Daejeon Metropolitan, KR;
Dae Woong Lee, Daejeon Metropolitan, KR;
Jung Bum Kim, Daejeon Metropolitan, KR;
In Ho Hwang, Daejeon Metropolitan, KR;
Hyeon Choi, Daejeon Metropolitan, KR;
Min Jeong Lee, Seoul, KR;
Dong Hoon Lee, Seoul, KR;
Kong Kyeom Kim, Daejeon Metropolitan, KR;
Jae Soon Bae, Daejeon Metropolitan, KR;
Dae Woong Lee, Daejeon Metropolitan, KR;
Jung Bum Kim, Daejeon Metropolitan, KR;
LG Chem. Ltd., Seoul, KR;
Abstract
The present invention relates to an organic thin film transistor which includes an organic layer comprising an organic compound facilitating the ohmic contact between a semi-conducting layer and electrodes and serving as the semi-conducting layer. The organic thin film transistor according to the present invention has excellent electric contact between the semiconductor layer and the source electrode/drain electrode, and thus can be widely used as components for electric/electronic devices. As a result, as the materials for the source electrode or the drain electrode in the organic thin film transistor, materials which are less expensive and excellent in processibility though they have a low work function as the materials can be used.