The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Jul. 19, 2005
Applicants:
Maud Vinet, Rives, FR;
Jean-charles Barbe, Grenoble, FR;
Pierre Mur, Crolles, FR;
François DE Crecy, Seyssins, FR;
Inventors:
Maud Vinet, Rives, FR;
Jean-Charles Barbe, Grenoble, FR;
Pierre Mur, Crolles, FR;
François De Crecy, Seyssins, FR;
Assignee:
Commissariat A l'Energie Atomique, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals (). It consists in: