The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Sep. 10, 2009
Hiromitsu Mashita, Yokohama, JP;
Toshiya Kotani, Machida, JP;
Hidefumi Mukai, Kawasaki, JP;
Fumiharu Nakajima, Yokohama, JP;
Chikaaki Kodama, Yokohama, JP;
Hiromitsu Mashita, Yokohama, JP;
Toshiya Kotani, Machida, JP;
Hidefumi Mukai, Kawasaki, JP;
Fumiharu Nakajima, Yokohama, JP;
Chikaaki Kodama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method including: forming a first film on a target film; forming resist patterns on the first film; processing the first film with the resist patterns to form first patterns including: periodic patterns; and aperiodic patterns; removing the resist patterns; forming a second film over the target film; processing the second film to form second side wall patterns on side walls of the first patterns; removing the periodic patterns; and processing the target film with the aperiodic patterns and the second side wall patterns, thereby forming a target patterns including: periodic target patterns; aperiodic target patterns; and dummy patterns arranged between the periodic target patterns and the aperiodic patterns and arranged periodically with the periodic target patterns.