The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2010

Filed:

Apr. 16, 2007
Applicants:

Go Miya, Ibaraki-ken, JP;

Manabu Edamura, Ibaraki-ken, JP;

Ken Yoshioka, Hikari, JP;

Ryoji Nishio, Kudamatsu, JP;

Inventors:

Go Miya, Ibaraki-ken, JP;

Manabu Edamura, Ibaraki-ken, JP;

Ken Yoshioka, Hikari, JP;

Ryoji Nishio, Kudamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.


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