The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2010

Filed:

Sep. 25, 2006
Applicant:

Alek Chi-heng Chen, Xindian, TW;

Inventor:

Alek Chi-Heng Chen, Xindian, TW;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multiple exposure method for enhancing the image resolution in a lithographic system is disclosed. The method comprises, for example, decomposing a desired pattern to be printed on the substrate into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating the substrate with a positive tone resist layer and a relatively thin positive tone developable material layer on top of a target layer which is to be patterned with the desired dense feature pattern. The positive tone developable material absorbs exposure radiation during a first patterning exposure and, after development, during a second patterning exposure to prevent exposure of at least a portion of the positive tone resist layer, underneath exposed portions of the positive tone developable material layer, to an exposure dose above a fraction of an energy-to-clear exposure dose associated with the positive tone resist layer.


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