The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Jun. 07, 2006
Applicants:
Eun-ju Bae, Yongin-si, KR;
Yo-sep Min, Yonin-si, KR;
Wan-jun Park, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
D01F 9/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming nitrogen-doped or other Group V-doped single-walled nanotubes including: forming a catalyst metal layer on a substrate; loading a substrate having the catalyst metal layer into a reaction chamber; forming an HO or other plasma atmosphere in a reaction chamber; and forming the nitrogen-doped or other Group V-doped carbon nanotubes on the catalyst metal layer by supplying a carbon or other Group IV precursor and a nitrogen or other Group V precursor into a reaction chamber where a chemical reaction therebetween is generated in the HO or other plasma atmosphere.