The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Apr. 22, 2005
Tinghao F. Wang, Irvine, CA (US);
Dieter Dornisch, Carlsbad, CA (US);
Julia M. Wu, Las Flores, CA (US);
Hadi Abdul-ridha, Irvine, CA (US);
David J. Howard, Irvine, CA (US);
Tinghao F. Wang, Irvine, CA (US);
Dieter Dornisch, Carlsbad, CA (US);
Julia M. Wu, Las Flores, CA (US);
Hadi Abdul-Ridha, Irvine, CA (US);
David J. Howard, Irvine, CA (US);
Newport Fab, LLC, Newport Beach, CA (US);
Abstract
A method of patterning a metal layer in a semiconductor die comprises forming a mask on the metal layer to define an open region and a dense region. The method further comprises etching the metal layer at a first etch rate to form a number of metal segments in the open region and etching the metal layer at a second etch rate to form a number of metal segments in the dense region, where the first etch rate is approximately equal to the second etch rate. The method further comprises performing a number of strip/passivate cycles to remove a polymer formed on sidewalls of the metal segments in the dense region. The sidewalls of the metal segments in the dense region undergo substantially no undercutting and residue is removed from the sidewalls of the metal segments in the dense region.