The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Jul. 08, 2005
James E. Green, Caldwell, ID (US);
Darwin A. Clampitt, Boise, ID (US);
James E. Green, Caldwell, ID (US);
Darwin A. Clampitt, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A high surface area capacitor structure includes a storage electrode with recesses. An upper surface of the storage electrode has a maze-like appearance. Low elevation regions of a hemispherical grain polysilicon layer may remain on the upper surface of the storage electrode. The storage electrode or portions thereof may be lined or coated with dielectric material. The dielectric material may space a cell electrode of the high surface area capacitor structure apart from the storage electrode. One or both of the storage electrode and the cell electrode may be formed from polysilicon. Intermediate structures, which include mask material over contiguous low elevation regions of a layer of hemispherical grain polysilicon, which may have a maze-like appearance, and apertures located laterally between the low elevation regions of the layer of hemispherical grain polysilicon, are also disclosed.