The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Jan. 04, 2007
Tsutomu Okazaki, Tokyo, JP;
Motoi Ashida, Tokyo, JP;
Hiroji Ozaki, Tokyo, JP;
Tsuyoshi Koga, Tokyo, JP;
Daisuke Okada, Tokyo, JP;
Tsutomu Okazaki, Tokyo, JP;
Motoi Ashida, Tokyo, JP;
Hiroji Ozaki, Tokyo, JP;
Tsuyoshi Koga, Tokyo, JP;
Daisuke Okada, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.