The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Sep. 13, 2006
Gwo-yuh Shiau, Hsinchu, TW;
Ming-chyi Liu, Hsinchu, TW;
Yuan-chih Hsieh, Hsinchu, TW;
Shih-chi Fu, Taipei, TW;
Chia-shiung Tsai, Hsinchu, TW;
Gwo-Yuh Shiau, Hsinchu, TW;
Ming-Chyi Liu, Hsinchu, TW;
Yuan-Chih Hsieh, Hsinchu, TW;
Shih-Chi Fu, Taipei, TW;
Chia-Shiung Tsai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.