The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Oct. 29, 2003
Andrew Graham, München, DE;
Franz Hofmann, München, DE;
Wolfgang Hönlein, Unterhaching, DE;
Johannes Kretz, München, DE;
Franz Kreupl, München, DE;
Erhard Landgraf, München, DE;
Johannes Richard Luyken, München, DE;
Wolfgang Rösner, Ottobrunn, DE (US);
Thomas Schulz, Austin, TX (US);
Michael Specht, München, DE;
Andrew Graham, München, DE;
Franz Hofmann, München, DE;
Wolfgang Hönlein, Unterhaching, DE;
Johannes Kretz, München, DE;
Franz Kreupl, München, DE;
Erhard Landgraf, München, DE;
Johannes Richard Luyken, München, DE;
Wolfgang Rösner, Ottobrunn, DE (US);
Thomas Schulz, Austin, TX (US);
Michael Specht, München, DE;
Qimonda, AG, Munich, DE;
Abstract
The invention relates to a vertical integrated component, a component arrangement and a method for production of a vertical integrated component. The vertical integrated component has a first electrical conducting layer, a mid layer, partly embodied from dielectric material on the first electrical conducting layer, a second electrical conducting layer on the mid layer and a nanostructure integrated in a through hold introduced in the mid layer. A first end section of the nanostructure is coupled to the first electrical conducting layer and a second end section is coupled to the second electrical conducting layer. The mid layer includes a third electrical conducting layer between two adjacent dielectric partial layers, the thickness of which is less than the thickness of at least one of the dielectric partial layers.