The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Jun. 29, 2007
Ilya V. Karpov, Santa Clara, CA (US);
Charles C. Kuo, Union City, CA (US);
Yudong Kim, Cupertino, CA (US);
Greg Atwood, San Jose, CA (US);
Ilya V. Karpov, Santa Clara, CA (US);
Charles C. Kuo, Union City, CA (US);
Yudong Kim, Cupertino, CA (US);
Greg Atwood, San Jose, CA (US);
STMicroeletronics S.r.l., Agrate Brianza, IT;
Abstract
Both a chalcogenide select device and a chalcogenide memory element are formed within vias within dielectrics. As a result, the chalcogenides is effectively trapped within the vias and no glue or adhesion layer is needed. Moreover, delamination problems are avoided. A lance material is formed within the same via with the memory element. In one embodiment, the lance material is made thinner by virtue of the presence of a sidewall spacer; in another embodiment no sidewall spacer is utilized. A relatively small area of contact between the chalcogenide used to form a memory element and the lance material is achieved by providing a pin hole opening in a dielectric, which separates the chalcogenide and the lance material.