System and method for imprint lithography to facilitate dual damascene integration in a single imprint act

Abstract

A system and method are provided to facilitate dual damascene interconnect integration in a single imprint step. The method provides for creation of a translucent imprint mold with three-dimensional features comprising the dual damascene pattern to be imprinted. The imprint mold is brought into contact with a photopolymerizable organosilicon imaging layer deposited upon a transfer layer which is spin coated or otherwise deposited upon a dielectric layer of a substrate. When the photopolymerizable layer is exposed to a source of illumination, it cures with a structure matching the dual damascene pattern of the imprint mold. A halogen breakthrough etch followed by oxygen transfer etch transfer the vias from the imaging layer into the transfer layer. A second halogen breakthrough etch followed by a second oxygen transfer etch transfer the trenches from the imaging layer into the transfer layer. A dielectric etch transfers the pattern from the transfer layer into the dielectric layer. A metal fill process then fills the dual damascene openings of the dielectric layer with metal.