The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Jun. 12, 2007
Hae-jung Lee, Kyoungki-do, KR;
Ik-soo Choi, Kyoungki-do, KR;
Chang-youn Hwang, Kyoungki-do, KR;
Mi-hyune You, Kyoungki-do, KR;
Hae-Jung Lee, Kyoungki-do, KR;
Ik-Soo Choi, Kyoungki-do, KR;
Chang-Youn Hwang, Kyoungki-do, KR;
Mi-Hyune You, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-Do, KR;
Abstract
A method for fabricating a storage node contact in a semiconductor device includes forming a landing plug over a substrate, forming a first insulation layer over the landing plug, forming a bit line pattern over the first insulation layer, forming a second insulation layer over the bit line pattern, forming a mask pattern for forming a storage node contact over the second insulation layer, etching the second and first insulation layers until the landing plug is exposed to form a storage node contact hole including a portion having a rounded profile, filling a conductive material in the storage node contact hole to form a contact plug, and forming a storage node over the contact plug.