The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Nov. 29, 2006
Min-sang Kim, Seoul, KR;
Sung-young Lee, Yongin-si, KR;
Sung-min Kim, Incheon, KR;
Eun-jung Yun, Seoul, KR;
In-hyuk Choi, Seoul, KR;
Min-Sang Kim, Seoul, KR;
Sung-Young Lee, Yongin-si, KR;
Sung-Min Kim, Incheon, KR;
Eun-Jung Yun, Seoul, KR;
In-Hyuk Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of forming a pattern, a sacrificial layer pattern and a stop layer pattern for preventing or reducing an epitaxial growth may be formed on a substrate. The sacrificial layer pattern may have a first hole therethrough, and the first hole partially exposes a top surface of the substrate. At least one active pattern may be formed on a bottom and a sidewall of the first hole by performing a selective epitaxial growth process on the top surface of the substrate and a sidewall of the sacrificial layer pattern. The sacrificial layer pattern and the stop layer pattern for preventing or reducing the epitaxial growth may be removed from the substrate. The at least one active pattern formed by the above method may have a finer size and an improved shaped compared to a conventional active pattern formed by directly patterning layers using a photoresist pattern. Damages in a photolithography process may be prevented or reduced from being generated.