The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Oct. 10, 2006
Shigeru Shiratake, Tokyo, JP;
Shigeru Shiratake, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
Gate trenchesare formed in a memory cell region M using a silicon nitride filmas a mask in a state in which the semiconductor substratein a P-type peripheral circuit region P and an N-type peripheral circuit region N is covered by a gate insulating film, a protective film, and the silicon nitride film. A gate insulating filmis then formed on the inner walls of the gate trenches, and a silicon filmthat includes an N-type impurity is embedded in the gate trenches. The silicon nitride filmis then removed, and a non-doped silicon film is formed on the entire surface, after which a P-type impurity is introduced into the non-doped silicon film on region P, and an N-type impurity is introduced into the non-doped silicon film on regions M and N.