The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Dec. 19, 2002
Hiroyasu Shichi, Tokyo, JP;
Muneyuki Fukuda, Kokubunji, JP;
Isamu Sekihara, Fussa, JP;
Satoshi Tomimatsu, Kokubunji, JP;
Kaoru Umemura, Musashino, JP;
Hiroyasu Shichi, Tokyo, JP;
Muneyuki Fukuda, Kokubunji, JP;
Isamu Sekihara, Fussa, JP;
Satoshi Tomimatsu, Kokubunji, JP;
Kaoru Umemura, Musashino, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A hole in a sample from which a sample piece has been extracted with a focused ion beam is filled at high speed using ion beam gas assisted deposition. A method of filling the hole by using the ion beam includes a step of irradiating the hole formed in a face of the sample with the ion beam to thereby form an ion beam gas-assisted deposition layer in the hole. The ion beam gas-assisted deposition layer is formed in the hole while controlling the area to which the ion beam is irradiated so as to cause the ion beam to fall on a part of a side wall of the hole and to not fall on another part of the side wall in an area scanned with the ion beam. The filled hole may then be covered with a protective film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile