The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Aug. 31, 2006
Wilfried Von Ammon, Hochburg/Ach, AT;
Janis Virbulis, Babites pag., LT;
Martin Weber, Kastl, DE;
Thomas Wetzel, Haiming, DE;
Herbert Schmidt, Halsbach, DE;
Wilfried Von Ammon, Hochburg/Ach, AT;
Janis Virbulis, Babites pag., LT;
Martin Weber, Kastl, DE;
Thomas Wetzel, Haiming, DE;
Herbert Schmidt, Halsbach, DE;
Siltronic AG, Munich, DE;
Abstract
A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*10cmto 7.2*10cmand a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.