The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2010

Filed:

Sep. 19, 2006
Applicants:

Kiyohito Mukai, Osaka, JP;

Tadashi Tanimoto, Shiga, JP;

Mitsumi Ito, Kyoto, JP;

Inventors:

Kiyohito Mukai, Osaka, JP;

Tadashi Tanimoto, Shiga, JP;

Mitsumi Ito, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

At least a groove for separating a semiconductor substrate into a first region of a relatively large area and a second region of a relatively small area is formed. An insulating film is formed on the surface of the semiconductor substrate including the interior of the groove. The insulating film is etched using an etching mask having a lattice window pattern in such a manner that openings corresponding to the lattice window pattern are formed in the first region. As an alternative, openings corresponding to a single opening pattern are formed in the first region using an etching mask having the single opening pattern and the lattice window pattern, and the insulating film is etched in such a manner that openings corresponding to the lattice window pattern are formed in the second region. In both cases, the remaining insulating film is polished off.


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