The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
May. 15, 2007
Tzyh-cheang Lee, Hsinchu, TW;
Ming-yi Yang, Ping-Tung, TW;
Fu-liang Yang, Hsin-Chu, TW;
Denny Duan-iee Tang, Saratoga, CA (US);
Tzyh-Cheang Lee, Hsinchu, TW;
Ming-Yi Yang, Ping-Tung, TW;
Fu-Liang Yang, Hsin-Chu, TW;
Denny Duan-Iee Tang, Saratoga, CA (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A phase change memory is provided. The method includes forming contact plugs in a first dielectric layer. A second dielectric layer is formed overlying the first dielectric layer and a trench formed therein exposing portions of the contact plugs. A metal layer is formed over surfaces of the trench. One or more heaters are formed from the metal layer such that each heater is formed along one or more sidewalls and a portion of the bottom of the trench, wherein the portion of the heater along the sidewalls does not include a corner region of adjacent sidewalls. The trench is filled with a third dielectric layer, and a fourth dielectric layer is formed over the third dielectric layer. Trenches are formed in the fourth dielectric layer and filled with a phase change material. An electrode is formed over the phase change material.