The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Apr. 13, 2006
Yasuaki Yonemochi, Tokyo, JP;
Hisakazu Otoi, Tokyo, JP;
Akio Nishida, Tokyo, JP;
Shigeru Shiratake, Tokyo, JP;
Yasuaki Yonemochi, Tokyo, JP;
Hisakazu Otoi, Tokyo, JP;
Akio Nishida, Tokyo, JP;
Shigeru Shiratake, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor substrate having a main surface, first and second floating gates formed spaced apart from each other on the main surface of the semiconductor substrate, first and second control gates respectively located on the first and second floating gates, a first insulation film formed on the first control gate, a second insulation film formed on the second control gate to contact the first insulation film, and a gap portion formed at least between the first floating gate and the second floating gate by achieving contact between the first insulation film and the second insulation film are included. With this, a function of a nonvolatile semiconductor device can be ensured and a variation in a threshold voltage of a floating gate can be suppressed.