The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
May. 04, 2006
Chien-chang Huang, Hsin-Chu Hsien, TW;
Chih-cheng Hsieh, Hsin-Chu Hsien, TW;
Ching-wei Chen, Hsin-Chu Hsien, TW;
Chien-Chang Huang, Hsin-Chu Hsien, TW;
Chih-Cheng Hsieh, Hsin-Chu Hsien, TW;
Ching-Wei Chen, Hsin-Chu Hsien, TW;
PixArt Imaging Inc., Hsin-Chu Hsien, TW;
Abstract
A pinned photodiode sensor with gate-controlled SCR switch includes a pinned photodiode and a gate-controlled SCR switch. The SCR switch includes a P-type substrate, an N− doped region, and an N+ doped region formed on the substrate; a P+ doped region formed on the N− doped region; an oxide layer formed on the P substrate, the N− doped region, the N+ doped region, and the P+ doped region; and a gate formed above the P substrate and the N− doped region. The gate includes a P+ doped region and an N+ doped region. During an exposure procedure, a depletion region will not reach the interface between the oxide layer and the substrate, thereby preventing dark current leakage.